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| CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 1/4 BTD2118J3 Features * Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A * Excellent current gain characteristics * Complementary to BTB1412J3 Symbol BTD2118J3 Outline TO-252 BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25) Power Dissipation(TC=25) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd(TA=25) Pd(TC=25) Tj Tstg Limits 50 20 6 5 10 1 10 150 -55~+150 Unit V V V *1 *2 A W C C Note : *1. Single Pulse , Pw380s,Duty2%. *2. When mounted on a 40*40*0.7mm ceramic board. BTD2118J3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 50 20 6 120 Typ. 0.35 150 35 Max. 0.5 0.5 1 560 Unit V V V A A V MHz pF Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 2/4 Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=4A, IB=0.1A VCE=2V, IC=0.5A VCE=6V, IC=50mA, f=100MHz VCB=20V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification Of hFE Rank Range Q 120~270 R 180~390 S 270~560 BTD2118J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 Saturation Voltage-(mV) 1000 HFE@VCE=2V Current Gain--- HFE VCESAT@IC=20IB 100 10 100 1 10 100 1000 10000 Collector Current---IC(mA) 1 0.1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 10000 Saturation Voltage-(mV) VCE(SAT)@IB=40IB VBE(SAT)@IC=20IB Saturation Voltage-(mV) 100 1000 10 1 1 10 100 1000 10000 Collector Current---IC(mA) 100 1 10 100 1000 10000 Collector Current---IC(mA) Power Derating Curve 1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA( ) Power Dissipation---PD(W) 12 10 8 6 4 2 0 0 Power Derating Curve 50 100 150 200 Case Temperature---TC() BTD2118J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 4/4 Marking: B L F G D D2118 3 H E K 2 I 1 J Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2118J3 CYStek Product Specification |
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